Research Center of Ion Beam Technology was established in 1980 to commemorate the centenary of Hosei University. This Institute has been working on surface characterization, modification and synthesis of solid state materials such as semiconductor and novel materials using several million electron-volt protons, alpha participles and other atomic ion beam.
Main facilities are a 2.5 MV Van de Graaff accelerator and tandem accelerator with a terminal voltage of 1.5 MV.